کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
32350 | 44923 | 2011 | 19 صفحه PDF | دانلود رایگان |

SummaryNovel materials are in great demand for future applications. The discovery of graphene, a one atom thick carbon layer, holds the promise for unique device architectures and functionalities exploiting unprecedented physical phenomena. The ability to embed graphene materials in a double gated structure allowed on-chip realization of relativistic tunneling experiments in single layer graphene, the discovery of a gate tunable band gap in bilayer graphene and of a gate tunable band overlap in trilayer graphene. Here we discuss recent advances in the physics and nanotechnology fabrication of double gated single- and few-layer graphene devices.
Figure optionsDownload high-quality image (230 K)Download as PowerPoint slideResearch highlights▶ Physical phenomena and unprecedented material functionalities in double gated graphene-based devices. ▶ Klein tunneling in graphene p–n heterointerfaces. ▶ Gate tunable low energy band dispersion of few layer graphene.
Journal: - Volume 6, Issue 1, February 2011, Pages 42–60