کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
383823 | 660834 | 2010 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
The predictions of optoelectronic attributes of LED by neural network
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
هوش مصنوعی
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
In this paper, the predictions of optoelectronic attributes of Light-Emitting Diode (LED) chip, including luminous intensity, wavelength and forward voltage by using neural network were presented. The simulated data was measured by Electrical Luminescence (EL) technique. The well-trained neural models were used to predict the optoelectronic attributes of LED chip in its epitaxy growth stage in advance. These predicted results could provide the necessary information for the process engineer to adjust the control parameters of epitaxy growth accurately and then ensure the LED chip to be in conformance with the requested quality.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Expert Systems with Applications - Volume 37, Issue 9, September 2010, Pages 6282–6286
Journal: Expert Systems with Applications - Volume 37, Issue 9, September 2010, Pages 6282–6286
نویسندگان
Pin-Hsuan Weng, Yu-Ju Chen, Shuming T. Wang, Rey-Chue Hwang,