کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
4321177 1291582 2013 14 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Voltage-Sensing Domain of Voltage-Gated Proton Channel Hv1 Shares Mechanism of Block with Pore Domains
موضوعات مرتبط
علوم زیستی و بیوفناوری علم عصب شناسی علوم اعصاب سلولی و مولکولی
پیش نمایش صفحه اول مقاله
Voltage-Sensing Domain of Voltage-Gated Proton Channel Hv1 Shares Mechanism of Block with Pore Domains
چکیده انگلیسی

SummaryVoltage-gated sodium, potassium, and calcium channels are made of a pore domain (PD) controlled by four voltage-sensing domains (VSDs). The PD contains the ion permeation pathway and the activation gate located on the intracellular side of the membrane. A large number of small molecules are known to inhibit the PD by acting as open channel blockers. The voltage-gated proton channel Hv1 is made of two VSDs and lacks the PD. The location of the activation gate in the VSD is unknown and open channel blockers for VSDs have not yet been identified. Here, we describe a class of small molecules which act as open channel blockers on the Hv1 VSD and find that a highly conserved phenylalanine in the charge transfer center of the VSD plays a key role in blocker binding. We then use one of the blockers to show that Hv1 contains two intracellular and allosterically coupled gates.


► Voltage-sensing domain and pore domain have similar mechanisms of block
► Each VSD of Hv1 has a gate facing the inner side of the membrane
► Gating-charge transfer center in the VSD is involved in blocker binding
► Blocker release from one subunit depends on the state of the other subunit

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: - Volume 77, Issue 2, 23 January 2013, Pages 274–287
نویسندگان
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