کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
4322310 1291697 2008 12 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Extent of Voltage Sensor Movement during Gating of Shaker K+ Channels
موضوعات مرتبط
علوم زیستی و بیوفناوری علم عصب شناسی علوم اعصاب سلولی و مولکولی
پیش نمایش صفحه اول مقاله
Extent of Voltage Sensor Movement during Gating of Shaker K+ Channels
چکیده انگلیسی

SummaryVoltage-driven activation of Kv channels results from conformational changes of four voltage sensor domains (VSDs) that surround the K+ selective pore domain. How the VSD helices rearrange during gating is an area of active research. Luminescence resonance energy transfer (LRET) is a powerful spectroscopic ruler uniquely suitable for addressing the conformational trajectory of these helices. Using a geometric analysis of numerous LRET measurements, we were able to estimate LRET probe positions relative to existing structural models. The experimental movement of helix S4 does not support a large 15–20 Å transmembrane “paddle-type” movement or a near-zero Å vertical “transporter-type” model. Rather, our measurements demonstrate a moderate S4 displacement of 10 ± 5 Å, with a vertical component of 5 ± 2 Å. The S3 segment moves 2 ± 1 Å in the opposite direction and is therefore not moving as an S3–S4 rigid body.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: - Volume 59, Issue 1, 10 July 2008, Pages 98–109
نویسندگان
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