کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
4971368 1450525 2017 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Analytical long-term NBTI recovery model with slowing diffusivity and locking effect of hydrogen considered
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
Analytical long-term NBTI recovery model with slowing diffusivity and locking effect of hydrogen considered
چکیده انگلیسی
The NBTI degradation caused by hole trapping in gate insulator process-related preexisting traps (∆ VHT) and in generated bulk insulator traps (∆ VOT) can recover in several seconds (< 10 s), whereas the long-term recovery is dominated by interface trap generation (∆ VIT). In this paper, various explanations of NBTI recovery have been reviewed and a compact analytical long-term NBTI recovery model in which the slowing down diffusivity and locking effect of H2 are involved has been derived. The triangular diffusion profile of H2 is approximated and the fitting coefficient ξ of slowing down diffusivity is related to the stress and recovery time. Our proposed model has been validated by the previous theories and numerical calculation. Moreover, the investigation of NBTI recovery on a 40-nm CMOS process has been experimentally carried out and the results show that our compact NBTI recovery model can describe the long-term recovery well.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volume 75, August 2017, Pages 20-26
نویسندگان
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