کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
4971387 1450525 2017 8 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Enhancing the microstructure and tensile creep resistance of Sn-3.0Ag-0.5Cu solder alloy by reinforcing nano-sized ZnO particles
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
Enhancing the microstructure and tensile creep resistance of Sn-3.0Ag-0.5Cu solder alloy by reinforcing nano-sized ZnO particles
چکیده انگلیسی
Sn-Ag-Cu lead-free solders are regarded as a potential substitute for Pb-Sn solder alloys. In the current study, the non-reacting, non-coarsening ZnO nano-particles (ZnO NPs) were successfully incorporated into Sn-3.0Ag-0.5Cu (SAC305) lead-free solder by mechanical mixing of ZnO powders and melting at 900 °C for 2 h. Tensile creep testing was performed for plain SAC305 solder and SAC305-0.7 wt% ZnO NPs composite solders and a Garofalo hyperbolic sine power-law relationship was created from the experimental data to predict the creep mechanism as a function of tensile stress and temperature. Based on the tensile creep results, the creep resistance of SAC305 solder alloy was improved considerably with ZnO NPs addition, although the creep lifetime was increased. From microstructure observation, reinforcing ZnO NPs into SAC305 solder substantially suppressed the enlargement of Ag3Sn and Cu6Sn5 intermetallic compound (IMC) particles and decreased the spacing of the inter-particles between them, reduced the grain size of β-Sn and increased the eutectic area in the alloy matrix. The modification of microstructure, which leaded to a strong adsorption effect and high surface-free energy of ZnO NPs, could result in hindering the dislocation slipping, and thus provides standard dispersion strengthening mechanism. Moreover, the average activation energy (Q) for SAC305 and SAC305-0.7ZnO alloys were 50.5 and 53.1 kJ/mol, respectively, close to that of pipe diffusion mechanism in matrix Sn.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volume 75, August 2017, Pages 187-194
نویسندگان
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