کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
4971408 | 1450523 | 2017 | 13 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Analysis on the difference of the characteristic between high power IGBT modules and press pack IGBTs
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
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چکیده انگلیسی
The insulated gate bipolar transistor (IGBT) has been widely employed in such applications as alternate current motors and inverters for its lower driving power and lower on-state voltage. IGBT modules and press pack IGBTs are the most commonly used packaging for high-voltage and high-power-density applications. The difference in the packaging style and working conditions between IGBT modules and press pack IGBTs creates distinctions in, for instance, the thermal characteristics and reliability. Those distinctions lead to different applications and working conditions. In this paper, the development of IGBT devices has been reviewed, including the distinction of IGBT modules and press pack IGBTs in packaging style. Most importantly, the thermal and reliability characteristics have been compared in detail and the applications that are most suitable for IGBT modules and press pack IGBTs were outlined. The comparison of the thermal characteristics, reliability and applications provides guidance for users to take full advantage of the devices according to their requirements.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volume 78, November 2017, Pages 25-37
Journal: Microelectronics Reliability - Volume 78, November 2017, Pages 25-37
نویسندگان
Erping Deng, Zhibin Zhao, Qingming Xin, Jingwei Zhang, Yongzhang Huang,