کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
4971412 1450523 2017 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Comparison of the electro-thermal constraints on SiC MOSFET and Si IGBT power modules in photovoltaic DC/AC inverters
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
Comparison of the electro-thermal constraints on SiC MOSFET and Si IGBT power modules in photovoltaic DC/AC inverters
چکیده انگلیسی
This article presents a comparative study between SiC MOSFETs and Si IGBTs regarding changes in their junction temperature in a PV inverter application. The estimation of these variations is made by introducing the current mission profiles extracted from a photovoltaic plant over one year into a calculation tool. The latter is based on a losses model and a thermal model including a coupling between them. The calculation of the losses in SiC MOSFETs in the 3rd quadrant is detailed. The results are the mission profiles of the junction temperature of semiconductors, which allow for determining and comparing the thermal constraints in SiC MOSFET and Si IGBT power modules.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volume 78, November 2017, Pages 65-71
نویسندگان
, , ,