Metal defect localization of GaAs or Si based ICs by dynamic emission microscopy

Emission characteristics of GaAs based pseudomorphic HEMT (PHEMT) and silicon based ICs were discussed in this paper corresponding to some possible consequences caused by metal defect. We proposed a dynamic emission microscopy method to solve the GaAs based high speed digital circuit open failure consist of DCFL inverters and performed a backside analysis on silicon based flipchip IC with metal bridge defect.