کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
4971601 | 1450524 | 2017 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Practical quantitative scanning microwave impedance microscopy
ترجمه فارسی عنوان
میکروسکوپ امپدانس میکروویو اسکن میکروسکوپی عملی
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
چکیده انگلیسی
Scanning microwave impedance microscopy (sMIM) is an emerging technique that has the potential to displace conventional scanning capacitance microscopy (SCM), and other electrical scanning probe microscopy (SPM) techniques, for the profiling of dopants in semiconductor samples with sub-micron spatial resolution. In this work, we consider the practical application of sMIM for quantitative measurement of the dopant concentration profile in production semiconductor devices. We calibrate the sMIM using a doped calibration sample prior to performing the measurements on an “unknown” production device. We utilize nanoscale C-V curves to establish a calibration curve for both n- and p-type carriers in a single reference and apply the calibration curve to an “unknown” device presenting the measurements in units of doping concentration. The calibrated results are compared to SRP measurements on the same area of the device.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volumes 76â77, September 2017, Pages 214-217
Journal: Microelectronics Reliability - Volumes 76â77, September 2017, Pages 214-217
نویسندگان
Oskar Amster, Fred Stanke, Stuart Friedman, Yongliang Yang, St.J. Dixon-Warren, B. Drevniok,