Simulation of the thermal stress induced by CW 1340Â nm laser on 28Â nm advanced technologies

Previous study on the invasiveness of the CW 1340 nm laser source used in failure analysis, pinpointed silicide diffusions issue and experimentally defined a safe experimental area. Nevertheless, experimentally defining a safe area is a very long process. So we bypassed it by a new approach based on thermal laser stress modelling for defect localization applications (LVI/OBIRCH, cw-LVP). The first target of this study is the 28 nm FDSOI technologies. The results of this simulation are also compared to experiments to check accordance with the temperatures of material diffusion. The model can be used to define safe and not safe areas of interaction between the laser and the IC (exposure time, laser power). Laser invasiveness issues for different technologies and geometries can also be addressed.