کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
4971649 | 1450524 | 2017 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Investigation of the hot carrier degradation in power LDMOS transistors with customized thick oxide
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
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چکیده انگلیسی
In this paper, we report a combined experimental/simulation analysis of the degradation induced by hot carrier mechanisms, under ON-state stress, in silicon-based LDMOS transistors. In this regime, electrons can gain sufficient kinetic energy necessary to create interface states, hence inducing device degradation. In particular, the ON-resistance degradation in linear regime has been experimentally characterized by means of different stress conditions and temperatures. The hot-carrier stress regime has been fully reproduced in the frame of TCAD simulations by using physics-based models able to provide the degradation kinetics. A thorough investigation of the spatial interface trap distribution and its gate-bias and temperature dependences has been carried out achieving a quantitative understanding of the degradation effects in the device.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volumes 76â77, September 2017, Pages 475-479
Journal: Microelectronics Reliability - Volumes 76â77, September 2017, Pages 475-479
نویسندگان
A.N. Tallarico, S. Reggiani, P. Magnone, G. Croce, R. Depetro, P. Gattari, E. Sangiorgi, C. Fiegna,