The role of electronic energy loss in SHI irradiated Ni/oxide/n-GaP Schottky diode

The impact of energy loss mechanism by 100 MeV Au8 + ion on the dielectric parameters of Ni/oxide/n-GaP Schottky diode was studied under different fluences. The Schottky barrier height, donor ion concentration and interface states density of the diode were varied considerably under different ion fluence. The various dielectric parameters were altered significantly by the ion fluence. The reduction in dielectric constant after irradiation was ascribed to screening of space charge polarization due to reduction in interface states density. The relaxation peak of imaginary electric modulus indicates hopping type conduction mechanisms in the intermediate voltage range. The sensitive behavior of dielectric parameters with fluence dose was attributed to the alteration of interface state density due to high electronic energy loss of 100 MeV Au8 + ions at the interface.