کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
4971709 1450534 2016 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Transient dual interface measurement of junction-to-case thermal resistance in AlGaN/GaN HEMT utilizing an improved infrared microscope
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
Transient dual interface measurement of junction-to-case thermal resistance in AlGaN/GaN HEMT utilizing an improved infrared microscope
چکیده انگلیسی
The junction-to-case thermal resistance (RθJC) of a GaN/AlGaN HEMT is measured by Transient Dual Interface Method (TDIM). Different from other works about TDIM, an improved transient infrared microscope is used to measure the cooling curves, other than the traditional electrical method. Zth curves are used to determine the RθJC following the procedure of JESD51-14. The results demonstrate that the RθJC at 40 W power dissipation are about 0.791 K/W. In order to validate the method, measurements following MIL Std 833 have been done, and the results are consistent with the existing papers.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volume 66, November 2016, Pages 52-57
نویسندگان
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