کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
4971733 | 1450535 | 2016 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Experimental study of bias dependence of pulsed laser-induced single-event transient in SiGe HBT
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
This work presents a comprehensive investigation of single-event transient (SET) in SiGe HBT induced by pulsed laser irradiation at different bias conditions. The impacts of collector voltage VCC and base voltage VB on SET are compared and discussed. Experimental results show that SET in SiGe HBT highly depends on the applied bias conditions during irradiation. The underlying physical mechanisms are analyzed in detail. It is found that the variation of collector transient current approximately satisfies an ideal exponential discharge law. The additional discharge path plays a significant role in collector charge collection and discharge time constant once the transistors arrive at the reverse-active mode.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volume 65, October 2016, Pages 41-46
Journal: Microelectronics Reliability - Volume 65, October 2016, Pages 41-46
نویسندگان
Yabin Sun, Jun Fu, Yudong Wang, Wei Zhou, Zhihong Liu, Xiaojin Li, Yanling Shi,