کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
4971761 1450535 2016 9 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
An affordable experimental technique for SRAM write margin characterization for nanometer CMOS technologies
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
An affordable experimental technique for SRAM write margin characterization for nanometer CMOS technologies
چکیده انگلیسی
Increased process variability and reliability issues present a major challenge for future SRAM trends. Non-intrusive and accurate SRAM stability measurement is crucial for estimating yield in large SRAM arrays. Conventional SRAM variability metrics require including test structures that cannot be used to investigate cell bit fails in functional SRAM arrays. This work proposes the Word Line Voltage Margin (WLVM), defined as the maximum allowed word-line voltage drop during write operations, as a metric for the experimental characterization of write stability of SRAM cells. Their experimental measurement can be attained with minimal design modifications, while achieving good correlation with existing writability metrics. To demonstrate its feasibility, the distribution of WLVM values has been measured in an SRAM prototype implemented in 65 nm CMOS technology. The dependence of the metric with the width of the transistors has been also analysed, demonstrating their utility in post-process write stability characterization.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volume 65, October 2016, Pages 280-288
نویسندگان
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