کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
4971761 | 1450535 | 2016 | 9 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
An affordable experimental technique for SRAM write margin characterization for nanometer CMOS technologies
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
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چکیده انگلیسی
Increased process variability and reliability issues present a major challenge for future SRAM trends. Non-intrusive and accurate SRAM stability measurement is crucial for estimating yield in large SRAM arrays. Conventional SRAM variability metrics require including test structures that cannot be used to investigate cell bit fails in functional SRAM arrays. This work proposes the Word Line Voltage Margin (WLVM), defined as the maximum allowed word-line voltage drop during write operations, as a metric for the experimental characterization of write stability of SRAM cells. Their experimental measurement can be attained with minimal design modifications, while achieving good correlation with existing writability metrics. To demonstrate its feasibility, the distribution of WLVM values has been measured in an SRAM prototype implemented in 65Â nm CMOS technology. The dependence of the metric with the width of the transistors has been also analysed, demonstrating their utility in post-process write stability characterization.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volume 65, October 2016, Pages 280-288
Journal: Microelectronics Reliability - Volume 65, October 2016, Pages 280-288
نویسندگان
Bartomeu Alorda, Cristian Carmona, Gabriel Torrens, Sebastia Bota,