کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
4971836 | 1450536 | 2016 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Microcontroller susceptibility variations to EFT burst during accelerated aging
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Microcontroller susceptibility variations to EFT burst during accelerated aging Microcontroller susceptibility variations to EFT burst during accelerated aging](/preview/png/4971836.png)
چکیده انگلیسی
With deterioration of the electromagnetic environment, microcontroller unit (MCU) electromagnetic susceptibility (EMS) to transient burst interference has become a focus of academia and enterprise. Most electromagnetic compatibility (EMC) studies of MCUs have not taken the effects of aging into account. However, component aging can degrade the physical parameters of an MCU and change its immunity to EMI. This paper proposes a time-equivalent interval accelerated aging methodology combining DC electrical and high temperature stresses. The test results show variations in susceptibility to electrical fast transients (EFT) burst revealing increasing susceptibility. The reasons for MCU immunity drifts in the aging process are discussed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volume 64, September 2016, Pages 210-214
Journal: Microelectronics Reliability - Volume 64, September 2016, Pages 210-214
نویسندگان
J. Wu, C. Li, B. Li, W. Zhu, H. Wang,