کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
4971841 | 1450536 | 2016 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Investigation of temperature variations on analog/RF and linearity performance of stacked gate GEWE-SiNW MOSFET for improved device reliability
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Investigation of temperature variations on analog/RF and linearity performance of stacked gate GEWE-SiNW MOSFET for improved device reliability Investigation of temperature variations on analog/RF and linearity performance of stacked gate GEWE-SiNW MOSFET for improved device reliability](/preview/png/4971841.png)
چکیده انگلیسی
In this paper, reliability issues of Stacked Gate (SG)-Gate Electrode Workfunction Engineered (GEWE)-Silicon Nanowire (SiNW) MOSFET is examined over a wide range of ambient temperatures (200-600Â K) and results so obtained are simultaneously compared with conventional SiNW and GEWE-SiNW MOSFET using 3D-technology computer aided design quantum simulation. The results indicate that two temperature compensation points (TCP) are obtained: one for drain current (Ids) and other for cut-off frequency (fT) where device Figure Of Merits (FOMs) become independent of temperature, and it is found at 0.65Â V in SG-GEWE-SiNW in comparison to other devices, hence will open opportunities for wide range of temperature applications. Furthermore, significant improvement in Analog/RF performance of SG-GWEW-SiNW is observed in terms of Ion/Ioff, Subthreshold Swing (SS), device efficiency, fT, noise conductance and noise figure as temperature reduces. It is also observed that at low temperature SG-GEWE-SiNW unveils highly stable linearity performance owing to reduced distortions. These results explain the improved reliability of SG-GEWE-SiNW at low temperatures over GEWE-SiNW MOSFET.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volume 64, September 2016, Pages 235-241
Journal: Microelectronics Reliability - Volume 64, September 2016, Pages 235-241
نویسندگان
N. Gupta, R. Chaujar,