کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
4971876 1450536 2016 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Mission-profile-based stress analysis of bond-wires in SiC power modules
ترجمه فارسی عنوان
تجزیه و تحلیل استرس بر اساس ماموریت اتصالات سیم در ماژول های قدرت سی
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
چکیده انگلیسی
This paper proposes a novel mission-profile-based reliability analysis approach for stress on bond wires in Silicon Carbide (SiC) MOSFET power modules using statistics and thermo-mechanical FEM analysis. In the proposed approach, both the operational and environmental thermal stresses are taken into account. The approach uses a two-dimension statistical analysis of the operating conditions in a real one-year mission profile sampled at time frames 5 min long. For every statistical bin corresponding to a given operating condition, the junction temperature evolution is estimated by a thermal network and the mechanical stress on bond wires is consequently extracted by finite-element simulations. In the final step, the considered mission profile is translated in a stress sequence to be used for Rainflow counting calculation and lifetime estimation.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volume 64, September 2016, Pages 419-424
نویسندگان
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