Schottky behavior of reduced graphene oxide at various operating temperatures

Demand of portability has been a growing trend due to the thirst of catching up with the latest evolution of technology. This scenario has urged power supply designers to develop devices that are relatively smaller, faster and having a higher percentage of efficiency. In contrast, smaller devices tend to experience overwhelming heat dissipation which can be hazardous to the devices. A Schottky diode is a semiconductor diode which has a relatively low forward voltage drop and fast switching action. Despite having low voltage drop, Schottky devices are extremely sensitive to elevated temperature owing to high leakage at reverse bias region. The leakages are due to low energy barrier which is susceptible to thermal runaway when a nominal amount of heat is applied. This paper presents the study of Schottky behaviour of reduced graphene oxide (RGO) at various operating temperature. RGO has superior electronic and thermal properties as well as high carrier mobility. Graphene was obtained by chemical exfoliation of graphene oxide, which is a reduction method. Through spray-coating, the RGO is deposited onto a trench-structured Schottky base to form a Schottky diode. Electrical characterization has been carried out at different range of temperature; ranging from 25 °C to 125 °C. Result shows that overall, the device has the same range voltage drop around 1 V in all five different temperatures and is also considered to have a significantly low leakage current. Furthermore it also shows a unique current-voltage (I-V) pattern in which the impedance tangent increases from 25 °C to 50 °C but as the temperature gets higher, the impedance approaches the characteristics of a room temperature.