کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5009803 | 1462045 | 2017 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Hydrogen sensing characteristics of a Pd/AlGaOx/AlGaN-based Schottky diode
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی آنالیزی یا شیمی تجزیه
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Hydrogen sensing characteristics of a Pd/AlGaOx/AlGaN-based Schottky diode-type sensor are comprehensively studied. The AlGaOx dielectric layer is formed by an appropriate hydrogen peroxide (H2O2) treatment on the surface of the AlGaN layer. Experimentally, an extremely high hydrogen sensing response of 3.85Â ÃÂ 105 (under an introduced 1% H2/air gas) and a very low detection limit of 1Â ppm H2/air gas are obtained at 300Â K. This enhanced sensing performance is mainly caused by the effective dissociation of hydrogen molecules based on the presence of the AlGaOx layer. A response (recovery) time constant of 33(17) s is found upon exposure to 1% H2/air gas at 300Â K. The influence of humidity on the hydrogen sensing performance is studied in this work. Based on the improved properties, the studied device could serve as a candidate for high-performance hydrogen sensing applications.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Sensors and Actuators B: Chemical - Volume 246, July 2017, Pages 408-414
Journal: Sensors and Actuators B: Chemical - Volume 246, July 2017, Pages 408-414
نویسندگان
Huey-Ing Chen, Kai-Chieh Chuang, Ching-Hong Chang, Wei-Cheng Chen, I-Ping Liu, Wen-Chau Liu,