کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5021597 | 1469366 | 2017 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Thermal resistant, mechanical and electrical properties of a novel ultrahigh-content randomly-oriented CNTs reinforced SiC matrix composite-sheet
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی (عمومی)
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
Development of a thermal resistant CNT based sheet is important for high temperature engineering perspectives with multifunctional purposes. This work reports a novel CNT reinforced SiC matrix composite-sheet by polymer derived ceramics (PDC) processes using polycarbosilane as SiC precursor. The microstructure contains the amorphous SiC matrix (4 phases: SiC, SiCxOy, SiO2 and free carbon), the chemical sharp CNT/SiC interfaces and the ultrahigh density multi-walled CNTs that are randomly oriented. The composite-sheet is thermally and mechanically stable in non-oxidizing atmosphere up to 1000 °C. The mechanical properties of the composite-sheet are significantly enhanced, with the Young's modulus increased by â¼7 times, and the tensile strength â¼4 times, compared to those of pure CNT sheet. The strengthening mechanism is a bridging effect of the SiC matrix to the CNTs to favor better load transfers during fracturing. Therefore, the composite-sheet shows an elastic-brittle fracture response, with limited CNT pull-out in the fracture surface after tensile test. Finally, the composite-sheet shows an excellent electrical conductivity that is also comparable to the pure CNT sheet, and is found enhanced after post heat-treatment at temperatures >800 °C in non-oxidizing atmosphere, presumably due to the more content free carbon formations in the SiC matrix.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Composites Part B: Engineering - Volume 119, 15 June 2017, Pages 10-17
Journal: Composites Part B: Engineering - Volume 119, 15 June 2017, Pages 10-17
نویسندگان
L.W. Yang, X.S. Zhang, H.T. Liu, M. Zu,