Effective Schottky barrier lowering of Ni silicide/p-Si(100) using an ytterbium confinement structure for high performance n-type MOSFETs

Effective Schottky barrier lowering of Ni silicide/p-Si(100) using an ytterbium confinement structure for high performance n-type MOSFETs

Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials & Design - Volume 114, 15 January 2017, Pages 220-225

Keng-Hui Shen, Szu-Hung Chen, Wei-Ting Liu, Bao-Hsien Wu, Lih-Juann Chen,