کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5025307 | 1470582 | 2017 | 36 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Investigation of microstructural, optical and dc electrical properties of spin coated Al:WO3 thin films for n-Al:WO3/p-Si heterojunction diodes
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موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی (عمومی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Investigation of microstructural, optical and dc electrical properties of spin coated Al:WO3 thin films for n-Al:WO3/p-Si heterojunction diodes Investigation of microstructural, optical and dc electrical properties of spin coated Al:WO3 thin films for n-Al:WO3/p-Si heterojunction diodes](/preview/png/5025307.png)
چکیده انگلیسی
Tungsten trioxide (WO3) thin films have been prepared via sol-gel spin-coating technique for different concentrations of Al (0, 3, 6, 9 and 12 wt.%) and investigated them by structural, optical, dc electrical and Al:WO3/p-Si heterojunction diodes. The XRD analysis reveals that the trivalent impurity of Al effectively influences the WO3. The UV-vis analysis shows an increase in the Al dopant that caused the band gap energy (Eg) to decrease. The SEM analysis shows that the size of the plate-like grains has reduced the Al:WO3 thin films. The composition ratio of W, O and Al elements has been confirmed by EDX spectrum. The dc electrical conductivity analysis has identified that Mott's 3D variable hopping (VRH) mechanism influences the Al:WO3 thin films. The Al:WO3/p-Si p-n heterojunction diode parameters of ideality factor (n), barrier height (ΦB) and series resistance (Rs) have been calculated using the J-V method. From the current density-voltage-temperature (J-V-T) analysis, the inhomogeneity of barrier heights was extracted using the thermionic emission mechanism with Gaussian distribution (GD) function. As a result, the 9 wt.% of Al:WO3/p-Si diode gives better results compared to the other Al:WO3/p-Si diodes.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Optik - International Journal for Light and Electron Optics - Volume 145, September 2017, Pages 169-180
Journal: Optik - International Journal for Light and Electron Optics - Volume 145, September 2017, Pages 169-180
نویسندگان
M. Raja, J. Chandrasekaran, M. Balaji, P. Kathirvel,