Short noteDose dependence effect of thermoluminescence process in TlInS2:Nd single crystals

In this paper, thermoluminescence (TL) properties of TlInS2:Nd single crystals were modeled using an interactive model (one trap and one kind of recombination center). The simulated work presented here was based on the experiment conducted by Delice et al. The thermoluminescence glow curve of TlInS2:Nd single crystals has been characterized by one main peak at 26 K, which confirm the presence of one active electron trap level in the forbidden band of this material. The model used in this work is similar to other models cited previously in the literature. The calculated glow curve was in good agreement with the experimental one. Our numerical results show also that the thermoluminescence intensity increases with the increase of the dose rate (D). In the selected dose level range; the thermoluminescence response is linear and no saturation can be observed.