کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5025675 | 1470597 | 2017 | 19 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Modification of gate dielectric on the performance of copper (II) phthalocyanine based on organic field effect transistors
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی (عمومی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Modification of gate dielectric on the performance of copper (II) phthalocyanine based on organic field effect transistors Modification of gate dielectric on the performance of copper (II) phthalocyanine based on organic field effect transistors](/preview/png/5025675.png)
چکیده انگلیسی
Top contact Copper (II) Phthalocyanine (CuPc) based on Organic Field Effect Transistor (OFET) using various dielectrics were fabricated. The bare SiO2 and bilayer Polyvinyl alcohol (PVA)/SiO2 gate insulators with different thickness (50 and 100Â nm) onto thin SiO2 layers were used as gate dielectrics. It is found that using bilayer gate dielectrics can improve device performance. The PVA/SiO2 bilayer gate insulator architecture increases the field-effect mobility by 20 times and improves the on/off ratio from 103-104. Also the photosensitivity of device was examined under different light intensities. The photosensitivity CuPc-OFET was found as 10 at a light intensity of 100Â mW/cm2 at the off state. This proposes that the CuPc-OFET behaves as a phototransistor.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Optik - International Journal for Light and Electron Optics - Volume 130, February 2017, Pages 61-67
Journal: Optik - International Journal for Light and Electron Optics - Volume 130, February 2017, Pages 61-67
نویسندگان
Serif Ruzgar, Yasemin Caglar, Saliha Ilican, Mujdat Caglar,