Room temperature HEMT detector in 0.1-1Â THz

In this paper, a method for improving the non-resonance regime of the THz detection at room temperature by GaAs/AlGaAshetrostructure High Electron Mobility Transistor (HEMT) is proposed in the range of 0.1-1 THz.In this method, by applying DC voltage to drain, the momentum relaxation time increases and as a result, the quality of parameter is reaching resonance regime. This leads THz HEMT detector to be able of operate in room temperature.