Computation of impurity concentration in silicon photodiode based on their optical properties

This paper attempts to compute the doping concentration in silicon photodiode based on their optical properties at wavelength 1500 nm, where optical properties deal with absorption, reflection, dispersion and transmission of signal. The computed results predict zero dispersion loss is accomplished with silicon photodiode. However definite losses in terms of reflection and absorption are encountered with above structures. Lastly simulation outcome envisages an excellent linear variation of transmitted intensity provides an accurate computation of impurity concentration in silicon photodiode at wavelength, 1500 nm.