کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5025797 | 1470592 | 2017 | 31 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Electronic structure and optical properties of dilute boron-bismide quaternary alloys BxGa1-xAs1-yBiy/GaAs for infrared optoelectronic devices
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی (عمومی)
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چکیده انگلیسی
Electronic structure and optical properties of the dilute boron-bismide quaternary BxGa1âxAs1âyBiy alloys have been investigated from first-principles. The calculated structural parameters are found to be in excellent agreement with the experimental data. Optical properties are calculated by the recent developed Tran-Blaha-modified Becke-Johnson (TB-mBJ) potential which gives accurate band gaps. We find that incorporation of B and Bi into GaAs resulted in a reduced band gap. A quaternary BxGa1âxAs1âyBiy alloy with x = y = 0.125 is predicted to be lattice-matched to GaAs. The optical properties of BxGa1âxAs1âyBiy depend on the incorporated of B and Bi contents. This makes BxGa1âxAs1âyBiy/GaAs a promising system for the design of high-efficiency solar cells and advanced infrared Laser Diodes.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Optik - International Journal for Light and Electron Optics - Volume 135, April 2017, Pages 57-69
Journal: Optik - International Journal for Light and Electron Optics - Volume 135, April 2017, Pages 57-69
نویسندگان
Abdenacer Assali, M'hamed Bouslama, A.H. Reshak, Samir Zerroug, Hamza Abid,