Simulation of the Si-CCD irradiated by millisecond pulse laser

Based on the Fourier heat conduction equation and the thermoelastic equation, the thermal-stress coupling model of the Si-CCD irradiated by millisecond pulse laser was established, the time-space distribution of the temperature field and the stress field on the Si-CCD was calculated. The results show that: the damage firstly occurred in the color filter layer; increased the laser energy density, part of the microlens and the color filters were missing; then continued to increase the laser energy density, the photosensitive area in the N-Si layer was melting; when the channels in the N-Si layer were damaged, the Si-CCD was under functional loss. In this paper, the simulation results were consistent with the experiment results.