Effect of biasing voltage on quantum confinement in GaN/AlxGa1-xN nanowire structure

Effect of biasing voltage on the quantum confinement has been studied to analyse performance of GaN/AlGaN nanowire structure. Here, rectangular model of quantum nanowire with GaN active region surrounded by AlxGa1-xN barrier region has been considered. Schrodinger equation in two dimensions has been solved for this model to study electron confinement. The solving approach has been considerately utilized for sufficient accuracy and efficiency. Moreover, wave function intensity and FWHM for different biasing voltages has been obtained along with the potential profile in quantum nanowire structure. Biasing voltage was increased from 1 V to 2.5 V. The confinement factor has been increased from 0.81 to 0.838 with an increase in bias of 1.0 V to 2.5 V at Al mole fraction of 0.25. Our analysis shows that increasing biasing voltage increases the confinement of carriers in the wire region which will be advantageous for lasing action. Significant decrease in escape time of the carriers with biasing voltage has been obtained.