کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5026066 1470591 2017 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Theory of sulfur-vacancy defect in diamond: a comparable NV−1 isoelectronic center
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی (عمومی)
پیش نمایش صفحه اول مقاله
Theory of sulfur-vacancy defect in diamond: a comparable NV−1 isoelectronic center
چکیده انگلیسی
A color center in diamond which is a comparable NV−1 isoelectronic center is predicted based on first-principles electronic structure calculations. The defect consists of a substitutional sulfur and an adjacent carbon vacancy (S-V). We find that the S-V center is optically accessible with two zero-phonon line of about 1.12 and 1.22 eV. The S-V center also shares many of the characteristics of the NV−1 center in diamond. A prominent spin coherence time is predicted by combining first-principles calculations and a mean-field theory for spin hyperfine interaction, and is at the same level with that of NV−1 center in diamond. Furthermore, the neutral S-V center in diamond provides more degrees of freedom for spin manipulation than the NV−1 center in diamond.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Optik - International Journal for Light and Electron Optics - Volume 136, May 2017, Pages 151-156
نویسندگان
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