کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5026066 | 1470591 | 2017 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Theory of sulfur-vacancy defect in diamond: a comparable NVâ1 isoelectronic center
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی (عمومی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Theory of sulfur-vacancy defect in diamond: a comparable NVâ1 isoelectronic center Theory of sulfur-vacancy defect in diamond: a comparable NVâ1 isoelectronic center](/preview/png/5026066.png)
چکیده انگلیسی
A color center in diamond which is a comparable NVâ1 isoelectronic center is predicted based on first-principles electronic structure calculations. The defect consists of a substitutional sulfur and an adjacent carbon vacancy (S-V). We find that the S-V center is optically accessible with two zero-phonon line of about 1.12 and 1.22Â eV. The S-V center also shares many of the characteristics of the NVâ1 center in diamond. A prominent spin coherence time is predicted by combining first-principles calculations and a mean-field theory for spin hyperfine interaction, and is at the same level with that of NVâ1 center in diamond. Furthermore, the neutral S-V center in diamond provides more degrees of freedom for spin manipulation than the NVâ1 center in diamond.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Optik - International Journal for Light and Electron Optics - Volume 136, May 2017, Pages 151-156
Journal: Optik - International Journal for Light and Electron Optics - Volume 136, May 2017, Pages 151-156
نویسندگان
G.D. Cheng, Q. Huang, Y.H. Shen, H.F. Huang, L. Yan,