کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5026118 1470591 2017 20 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Enhanced performance of GaN-based light-emitting diodes with composite electron blocking layer
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی (عمومی)
پیش نمایش صفحه اول مقاله
Enhanced performance of GaN-based light-emitting diodes with composite electron blocking layer
چکیده انگلیسی
The performance for GaN-based light-emitting diodes (LEDs) with specially designed composite electron blocking layers (CEBLs) that are inserted between the InGaN/GaN multiple quantum wells (MQWs) and the top p-GaN layer was studied intensively. The CEBLs are consisted of an AlGaN layer and a p-InAlGaN/GaN superlattice (SL). The simulation results indicated that the light output power and internal quantum efficiency for the GaN-based LED with CEBLs could be enhanced by 35.6% and 36% at an injection current of 350 mA, respectively, as compared to the previous GaN-based LED only with p-InAlGaN/GaN SL EBL. The improved uniformity of carrier distribution, the enhanced hole concentration and injection efficiency, as well as the increase in effective potential height for electrons and the decrease in the strain-induced polarization electric field are identified to be responsible for this significant improvement.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Optik - International Journal for Light and Electron Optics - Volume 136, May 2017, Pages 558-563
نویسندگان
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