کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
512110 866387 2016 11 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Singularity analysis of planar cracks in three-dimensional piezoelectric semiconductors via extended displacement discontinuity boundary integral equation method
ترجمه فارسی عنوان
تجزیه و تحلیل تکینگی ترک های مسطح در نیمه هادی های پیزوالکتریک سه بعدی با استفاده از روش معادلات انتگرال محدودیت انقطاع انقباضی
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر نرم افزارهای علوم کامپیوتر
چکیده انگلیسی

The displacement discontinuity boundary integral equation method is extended to analyze the singularity of near-border fields of the planar crack of arbitrary shape in the isotropic plane of a three-dimensional transversely isotropic piezoelectric semiconductor. The hyper-singular boundary integral equations are derived in terms of the displacement, electric potential and carrier density discontinuities across the crack faces, in which body integrals for the carrier density are introduced. Based on the finite-part integrals, singularity exponents and asymptotic expressions of the crack border fields are obtained. The stress, electric displacement and electric current intensity factors are given in terms of the displacement, electric potential and carrier density discontinuities. Finite element results for penny-shaped and line cracks based on the piezoelectric-conductor iterative method are used to verify the derivations of the intensity factors.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Engineering Analysis with Boundary Elements - Volume 67, June 2016, Pages 115–125
نویسندگان
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