N-type polymeric organic flash memory device: Effect of reduced graphene oxide floating gate

Fabrication process of the n-type organic memory devices. Gate and source/drain electrodes were thermally evaporated. The active layer [P (NDI2OD-T2)n] and the tunneling dielectric layer (HSQ) and were deposited by spin-coating. The floating gate layer is composed of Au NP's and reduced graphene oxide.186