Low temperature, solution-processed ambipolar field-effect transistors based on polymer/self-assembled monolayer modified InOx hybrid structures for balanced hole and electron mobilities exceeding 1 cm2 V−1 s−1

Low temperature, solution-processed ambipolar field-effect transistors based on polymer/self-assembled monolayer modified InOx hybrid structures for balanced hole and electron mobilities exceeding 1 cm2 V−1 s−1

Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Organic Electronics - Volume 43, April 2017, Pages 162-166

Sheng Sun, Yuzhi Li, Linfeng Lan, Peng Xiao, Zhenhui Chen, Zhenguo Lin, Junwu Chen, Junbiao Peng, Yong Cao,