کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5346763 | 1388011 | 2018 | 13 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Preparation of p-type GaN-doped SnO2 thin films by e-beam evaporation and their applications in p-n junction
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Various transparent GaN-doped SnO2 thin films were deposited on glass substrates by e-beam evaporation using GaN:SnO2 targets of different GaN weight ratios. It is interesting to find that carrier polarity of the thin films was converted from n-type to p-type with increasing GaN ratio higher than 15Â wt.%. The n-p transition in GaN-doped SnO2 thin films was explained for the formation of GaSn and NO with increasing GaN doping level in the films, which was identified by Hall measurement and XPS analysis. A transparent thin film p-n junction was successfully fabricated by depositing p-type GaN:SnO2 thin film on SnO2 thin film, and a low leakage current (6.2Â ÃÂ 10â5Â A at â4Â V) and a low turn-on voltage of 1.69Â V were obtained for the p-n junction.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 427, Part A, 1 January 2018, Pages 64-68
Journal: Applied Surface Science - Volume 427, Part A, 1 January 2018, Pages 64-68
نویسندگان
Shuliang Lv, Yawei Zhou, Wenwu Xu, Wenfeng Mao, Lingtao Wang, Yong Liu, Chunqing He,