کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5346949 | 1503551 | 2017 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Thermal atomic layer deposition of In2O3 thin films using dimethyl(N-ethoxy-2,2-dimethylcarboxylicpropanamide)indium and H2O
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موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Thermal atomic layer deposition of In2O3 thin films using dimethyl(N-ethoxy-2,2-dimethylcarboxylicpropanamide)indium and H2O Thermal atomic layer deposition of In2O3 thin films using dimethyl(N-ethoxy-2,2-dimethylcarboxylicpropanamide)indium and H2O](/preview/png/5346949.png)
چکیده انگلیسی
Indium oxide (In2O3) thin films were deposited by atomic layer deposition using dimethyl(N-ethoxy-2,2-dimethylcarboxylicpropanamide)indium (Me2In(EDPA)) and H2O as the In-precursor and reactant, respectively. The In2O3 films exhibited a saturated growth rate of 0.083 nm/cycle at a deposition temperature of 300 °C. Porous and amorphous films were grown at 150 °C, whereas dense polycrystalline films were deposited at higher deposition temperatures of 200-300 °C. XPS analysis revealed negligible carbon and nitrogen impurities incorporation within the films. The estimated bandgap of the In2O3 films by spectroscopic ellipsometry and UV-vis spectroscopy was about 3.7 eV and the increase in refractive index with deposition temperature from 150 to 300 °C indicated that dense films were grown at higher temperatures. The high transmittance (>94% in visible light) and good electrical properties (resistivity â¼1.2-7 mΩ cm, Hall mobility â¼28-66 cm2/V s) of the In2O3 films make them a viable option for optoelectronic applications.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 419, 15 October 2017, Pages 758-763
Journal: Applied Surface Science - Volume 419, 15 October 2017, Pages 758-763
نویسندگان
Raphael Edem Agbenyeke, Eun Ae Jung, Bo Keun Park, Taek-Mo Chung, Chang Gyoun Kim, Jeong Hwan Han,