کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5346975 | 1388023 | 2017 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Sequential PLD in oxygen/argon gas mixture of Al-doped ZnO thin films with improved electrical and optical properties
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موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Highly conductive transparent Al-doped ZnO (AZO) thin films were obtained at room temperature through sequential PLD (SPLD) from Zn and Al metallic targets in an oxygen/argon gas mixture. We have investigated the structural, electrical and optical properties as a function of the oxygen/argon pressure ratio in the chamber. The measured Hall carrier concentration was found to increase with argon injection from 1.3 Ã 1020 to 6.7 Ã 1020 cmâ3, while the laser shots ratio for Al/Zn targets ablation was kept constant. This increase was attributed to an enhancement of the substitution doping into the ZnO lattice. The argon injection also leads to an increase of the Hall mobility up to 20 cm2 Vâ1 sâ1, attributed to a reduction of interstitial-type defects. Thus, the approach of using an oxygen/argon gas mixture during SPLD from metallic targets allows obtaining at room temperature AZO samples with high optical transmittance (about 90%) and low electrical resistivity (down to 5.1 Ã 10â4 Ω cm).
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 418, Part B, 1 October 2017, Pages 456-462
Journal: Applied Surface Science - Volume 418, Part B, 1 October 2017, Pages 456-462
نویسندگان
Tudor Coman, Daniel Timpu, Valentin Nica, Catalin Vitelaru, Alicia Petronela Rambu, George Stoian, Mihaela Olaru, Cristian Ursu,