کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5347092 | 1503558 | 2017 | 17 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Flexible nonvolatile memory devices based on Au/PMMA nanocomposites deposited on PEDOT:PSS/Ag nanowire hybrid electrodes
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موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Flexible nonvolatile memory devices based on Au/PMMA nanocomposites deposited on PEDOT:PSS/Ag nanowire hybrid electrodes Flexible nonvolatile memory devices based on Au/PMMA nanocomposites deposited on PEDOT:PSS/Ag nanowire hybrid electrodes](/preview/png/5347092.png)
چکیده انگلیسی
Flexible nonvolatile memory (NVM) devices fabricated utilizing Au nanoparticles (AuNPs) embedded in a poly(methylmethacrylate) (PMMA) layer were fabricated on a silver nanowire (AgNW) or a poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS)/AgNW coated on poly(ethylene terephthalate) (PET) substrates. The transmittance and the sheet resistance of the PEDOT:PSS/AgNW hybrid layer were approximately 89% and 50 Ω/sq, respectively, which were comparable to the values for commercial indium-tin-oxide (ITO) electrodes. Current-voltage curves for the Al/PMMA:AuNP/PEDOT:PSS/AgNW/PET devices at 300 K showed clockwise current hysteresis behaviors due to the existence of the AuNPs. The endurance number of ON/OFF switching for the NVM devices was above 30 cycles. An ON/OFF ratio of 1 Ã 103 was maintained for retention times longer than 1 Ã 104 s. The maximum memory margins of the NVM devices before and after bending were approximately 3.4 Ã 103 and 1.4 Ã 103, respectively. The retention times of the devices before and after bending remained same 1 Ã 104 s. The memory margin and the stability of flexible NVMs fabricated on AgNW electrodes were enhanced due to the embedded PEDOT:PSS buffer layer.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 411, 31 July 2017, Pages 67-72
Journal: Applied Surface Science - Volume 411, 31 July 2017, Pages 67-72
نویسندگان
Sihyun Sung, Tae Whan Kim,