کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5347106 | 1503558 | 2017 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Layer-by-layer thinning of MoSe2 by soft and reactive plasma etching
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Layer-by-layer thinning of MoSe2 by soft and reactive plasma etching Layer-by-layer thinning of MoSe2 by soft and reactive plasma etching](/preview/png/5347106.png)
چکیده انگلیسی
Two-dimensional (2D) transition metal dichalcogenides (TMDs) like molybdenum diselenide (MoSe2) have recently gained considerable interest since their properties are complementary to those of graphene. Unlike gapless graphene, the band structure of MoSe2 can be changed from the indirect band gap to the direct band gap when MoSe2 changed from bulk material to monolayer. This transition from multilayer to monolayer requires atomic-layer-precision thining of thick MoSe2 layers without damaging the remaining layers. Here, we present atomic-layer-precision thinning of MoSe2 nanaosheets down to monolayer by using SF6Â +Â N2 plasmas, which has been demonstrated to be soft, selective and high-throughput. Optical microscopy, atomic force microscopy, Raman and photoluminescence spectra suggest that equal numbers of MoSe2 layers can be removed uniformly regardless of their initial thickness, without affecting the underlying SiO2 substrate and the remaining MoSe2 layers. By adjusting the etching rates we can achieve complete MoSe2 removal and any disired number of MoSe2 layers including monolayer. This soft plasma etching method is highly reliable and compatible with the semiconductor manufacturing processes, thereby holding great promise for various 2D materials and TMD-based devices.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 411, 31 July 2017, Pages 182-188
Journal: Applied Surface Science - Volume 411, 31 July 2017, Pages 182-188
نویسندگان
Yunfei Sha, Shaoqing Xiao, Xiumei Zhang, Fang Qin, Xiaofeng Gu,