Material parameters from frequency dispersion simulation of floating gate memory with Ge nanocrystals in HfO2

Material parameters from frequency dispersion simulation of floating gate memory with Ge nanocrystals in HfO2

Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 428, 15 January 2018, Pages 698-702

C. Palade, A.M. Lepadatu, A. Slav, S. Lazanu, V.S. Teodorescu, T. Stoica, M.L. Ciurea,