کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5347532 1503549 2017 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Band offsets in ITO/Ga2O3 heterostructures
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
Band offsets in ITO/Ga2O3 heterostructures
چکیده انگلیسی
The valence band offsets in rf-sputtered Indium Tin Oxide (ITO)/single crystal β-Ga2O3 (ITO/Ga2O3) heterostructures were measured with X-Ray Photoelectron Spectroscopy using the Kraut method. The bandgaps of the component materials in the heterostructure were determined by Reflection Electron Energy Loss Spectroscopy as 4.6 eV for Ga2O3 and 3.5 eV for ITO. The valence band offset was determined to be −0.78 ± 0.30 eV, while the conduction band offset was determined to be −0.32 ± 0.13 eV. The ITO/Ga2O3 system has a nested gap (type I) alignment. The use of a thin layer of ITO between a metal and the Ga2O3 is an attractive approach for reducing contact resistance on Ga2O3-based power electronic devices and solar-blind photodetectors.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 422, 15 November 2017, Pages 179-183
نویسندگان
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