Transparent field-effect transistors based on AlN-gate dielectric and IGZO-channel semiconductor

Transparent field-effect transistors based on AlN-gate dielectric and IGZO-channel semiconductor

Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 379, 30 August 2016, Pages 270-276

C. Besleaga, G.E. Stan, I. Pintilie, P. Barquinha, E. Fortunato, R. Martins,