کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5347665 | 1503588 | 2016 | 40 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Transmission of reactive pulsed laser deposited VO2 films in the THz domain
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موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Transmission of reactive pulsed laser deposited VO2 films in the THz domain Transmission of reactive pulsed laser deposited VO2 films in the THz domain](/preview/png/5347665.png)
چکیده انگلیسی
This work reports on the characteristics of the insulator-to-metal transition (IMT) of reactive pulsed laser deposited vanadium dioxide (VO2) films in the terahertz (THz) frequency range, namely the transition temperature TIMT, the amplitude contrast of the THz transmission over the IMT ÎA, the transition sharpness ÎT and the hysteresis width ÎH. XRD analysis shows the sole formation of VO2 monoclinic structure with an enhancement of (011) preferential orientation when varying the O2 pressure (PO2) during the deposition process from 2 to 25Â mTorr. THz transmission measurements as a function of temperature reveal that VO2 films obtained at low PO2 exhibit low TIMT, large ÎA, and narrow ÎH. Increasing PO2 results in VO2 films with higher TIMT, smaller ÎA, broader ÎH and asymmetric hysteresis loop. The good control of the VO2 IMT features in the THz domain could be further exploited for the development of advanced smart devices, such as ultrafast switches, modulators, memories and sensors.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 379, 30 August 2016, Pages 377-383
Journal: Applied Surface Science - Volume 379, 30 August 2016, Pages 377-383
نویسندگان
Nicolas Ãmond, Ali Hendaoui, Akram Ibrahim, Ibraheem Al-Naib, Tsuneyuki Ozaki, Mohamed Chaker,