کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5347702 | 1388052 | 2017 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Ultrafast in-situ null-ellipsometry for studying pulsed laser - Silicon surface interactions
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
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چکیده انگلیسی
The measurement of transient optical properties due to pulsed laser excitation allows better understanding of the nature of laser induced processes. Conventional ellipsometry is not capable of following changes in the femto-, pico- or nanosecond timescale. In this work, the pump and probe technique is combined with a single wavelength null-ellipsometry. This enabled us to follow the optical changes of silicon due to sub-ps laser pulse irradiation with ps time resolution. The combination of the 496 nm probe pulses with a Polarizer - Compensator - Sample - Analyzer (PCSA) configuration imaging null-ellipsometer provided Ψ and Πellipsometric angles of silicon irradiated with 248 nm pump pulses. Different laser intensities and delay times between the probe and pump pulses are used in the experiments. It is shown that besides thermal effects, the in depth free charge carrier distribution and their electron-phonon relaxation time has to be taken into account in the frame of the two-temperature model for satisfactory interpretation of the experimental results.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 421, Part B, 1 November 2017, Pages 325-330
Journal: Applied Surface Science - Volume 421, Part B, 1 November 2017, Pages 325-330
نویسندگان
J. Csontos, Z. Toth, Z. Pápa, B. Gábor, M. Füle, B. Gilicze, J. Budai,