کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5347773 1388052 2017 17 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Anisotropic optical constants and inter-band optical transitions in layered semiconductor TlGaSe2
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
Anisotropic optical constants and inter-band optical transitions in layered semiconductor TlGaSe2
چکیده انگلیسی
The dielectric function spectra of TlGaSe2 crystal with quasi-two-dimensional layered structure were studied over the photon range 1.5-5.0 eV in the temperature range 80-400 K. The (100) and (001) surfaces were accessed by spectroscopic ellipsometry and the dielectric function was retrieved after conventional treatment of the ellipsometric data. Inter-band optical transitions associated with the obtained dielectric function were determined by using standard critical point analysis. Assignment of the transitions was done within the framework of the calculated electronic band structure. An abrupt temperature-induced change in energy of the retrieved critical points for inter-band optical transitions between the electronic states formed with participation of thallium orbitals was obtained at 104.5, 123.3 and 247.0 K. The last temperatures agree well with the temperature points of the subsequent structural phase transitions in TlGaSe2.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 421, Part B, 1 November 2017, Pages 788-793
نویسندگان
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