Functionalization of graphene by atmospheric pressure plasma jet in air or H2O2 environments

- Facile plasma approach was used to functionalize graphene in air or in H2O2 solution.
- For the first time, observation of graphene reduction was observed in oxidative surrounding.
- N-doping of graphene in H2O2 solution occurred during the APPJ treatment.
- H2O2 solution acted as a buffer layer to prevent graphene etching.
- Increase in resistance of the plasma-treated graphene was measured.
- The transition of the material property from semi-metallic to semiconducting was revealed in the four-point probe measurement manifested by an increase in sheet resistance of the plasma-treated graphene.