Enhanced post-annealing stability of perpendicular Ta/CoFeB/Mg/MgO multilayers by inhibiting Ta diffusion

To reveal the underlying mechanism of Mg influence on the enhanced post-annealing stability of perpendicular Ta/CoFeB/Mg/MgO multilayers, the X-ray photoelectron spectroscopy analysis have been performed. It is found that a certain amount of Mg interlayer at the CoFeB/MgO interface could prevent the Ta oxidation to some extent due to the oxygen deficit MgOx (x < 1), and consequently lower the diffusion motivation of Ta from the bottom layer to the CoFeB/MgO interfaces to some extent during the annealing process. The prevention of Ta diffusion realizes the effective hybridization of Fe and O at the CoFeB/MgO interface and maintains interfacial magnetic anisotropy (KCoFeB/MgO). As a result, the perpendicular magnetic anisotropy at high annealing temperatures was maintained.