کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5348093 | 1503574 | 2017 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Radiation hardness of GaAs sensors against gamma-rays, neutrons and electrons
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موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Radiation hardness of GaAs sensors against gamma-rays, neutrons and electrons Radiation hardness of GaAs sensors against gamma-rays, neutrons and electrons](/preview/png/5348093.png)
چکیده انگلیسی
Radiation hardness of semi-insulating GaAs detectors against 60Co gamma-rays, fast neutrons and 5Â MeV electrons was compared. Slight improvements in charge collection efficiency (CCE) and energy resolution in FWHM (Full Width at Half Maximum) were observed at low doses with all kinds of radiation followed by their degradation. The effect occurred at a dose of about 10Â Gy of neutrons (CCE improved by 1%, FWHM by 5% on average), at 1Â kGy of electrons (FWHM decreased by 3% on average) and at 10Â kGy of gamma-rays (CCE raised by 5% and FWHM dropped by 8% on average), which is in agreement with the relative displacement damage of the used types of radiation. Gamma-rays of MeV energies are 1000-times less damaging than similar neutrons and electrons about 10-times more damaging than photons. On irradiating the detectors with neutrons and electrons, we observed a global increase in their detection efficiency, which was caused probably by enlargement of the active detector area as a consequence of created radiation defects in the base material. Detectors were still functional after a dose of 1140Â kGy of â¼1Â MeV photons, 104Â kGy of 5Â MeV electrons but only up to 0.576Â kGy of fast (â¼2 to 30Â MeV) neutrons.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 395, 15 February 2017, Pages 66-71
Journal: Applied Surface Science - Volume 395, 15 February 2017, Pages 66-71
نویسندگان
Andrea Å agátová, BohumÃr ZaÅ¥ko, FrantiÅ¡ek Dubecký, Tu Ly Anh, VladimÃr NeÄas, KatarÃna SedlaÄková, Márius PavloviÄ, Marko Fülöp,